Possibilities for the fabrication of heterostructures

Molecular beam epitaxy (MBE) on GaAs and InP substrates.

Epiwafers for photonic devices: edge-emitting lasers, VCSELs, p-i-n photodiodes etc.

Non-destructive epiwafer characterization (surface defect density analysis, PL spatial mapping).

Careful calibration of epi-layer composition, thickness, and doping level using X-ray characterization, PL measurements, ECV profiling.

Customer’s design.


Domostroitelnaya str., 16, liter B,
Saint Petersburg, 194292, Russian Federation